Simulations of Indium Arsenide / Gallium Antimonide Superlattice Barrier Based Thermophotovoltaic Cells

نویسندگان

  • Dante DeMeo
  • Abigail Licht
  • Corey Shemelya
  • J.-M. Masur
  • R. Rehm
  • M. Walther
  • Thomas E. Vandervelde
چکیده

Thermophotovoltaic (TPV) cells are semiconductor devices which convert radiated heat directly into electricity. This work investigates extending the operational wavelength of such devices into the long-wavelength infrared regime. Specifically, this work explores the use a barrier layer inserted into a p-n junction to suppress recombination pathways. Dark current simulations have been performed comparing a heterojunction barrier case with a typical p-n junction. Doping levels were varied to adjust the size of the space charge region of the junction and simulate the effect of different barrier widths within the depletion region.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Iii-v Compounds with Various Gate Dielectrics

The exponential rise in the density of silicon CMOS transistors has now reached a limit and threatening to end the microelectronics revolution. To tackle this difficulty, group III–V compound semiconductors due to their outstanding electron transport properties and high mobility are very actively being researched as channel materials for future highly scaled CMOS devices. In this paper, we have...

متن کامل

GaSb Thermophotovoltaic Cells Grown on GaAs Substrate Using the Interfacial Misfit Array Method

We present gallium antimonide (GaSb) p–i–n photodiodes for use as thermophotovoltaic (TPV) cells grown on gallium arsenide (100) substrates using the interfacial misfit array method. Devices were grown using molecular beam epitaxy and fabricated using standard microfabrication processes. X-ray diffraction was used to measure the strain, and current–voltage (I–V) tests were performed to determin...

متن کامل

Photovoltaic solar cells: An overview of state-of-the-art cell development and environmental issues

This paper gives an overview of the materials and methods used for fabricating photovoltaic solar cell devices. The technologies discussed include those based on the use of silicon (in the crystalline, multicrystalline, amorphous and micro-crystalline forms), the IIIeV compounds (e.g. gallium arsenide, indium phosphide and gallium antimonide), the polycrystalline compounds (e.g. cadmium telluri...

متن کامل

Development of InSb dry etch for mid-IR applications

Article history: Received 20 October 2015 Received in revised form 18 December 2015 Accepted 21 December 2015 Available online 22 December 2015 We present a new chlorine-free dry etching process which was used to successfully etch indium antimonide grown on gallium arsenide substrates while keeping the substrate temperature below 150 °C. By use of a reflowed photoresist mask a sidewall with 60 ...

متن کامل

Spectroscopic gas analyzers based on indium-phosphide, antimonide and lead-salt diode-lasers.

Currently available semiconductor lasers for spectroscopy in the near- and mid-infrared region based on direct band-to-band transitions as gallium-arsenide, indium-phosphide, antimonides and lead-salt containing compounds will be discussed together with the main features of different tunable diode-laser absorption spectrometers for trace gas analysis. Measurements of atmospheric carbon dioxide ...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2013