Simulations of Indium Arsenide / Gallium Antimonide Superlattice Barrier Based Thermophotovoltaic Cells
نویسندگان
چکیده
Thermophotovoltaic (TPV) cells are semiconductor devices which convert radiated heat directly into electricity. This work investigates extending the operational wavelength of such devices into the long-wavelength infrared regime. Specifically, this work explores the use a barrier layer inserted into a p-n junction to suppress recombination pathways. Dark current simulations have been performed comparing a heterojunction barrier case with a typical p-n junction. Doping levels were varied to adjust the size of the space charge region of the junction and simulate the effect of different barrier widths within the depletion region.
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